Symbol Conditions SKKT 91 SKKT 92
SKKH 91 SKKT 92B
SKKH 92
ITAV sin. 180; Tcase = 85 °C 95 A
ID B2/B6 Tamb = 45 °C, P 3/180 70 A/85 A
Tamb = 35 °C; P 3/180 F 140 A/175 A
IRMS W1/W3 Tamb = 35 °C; P 3/180 F 190 A/3 x 135 A
ITSM Tvj = 25 °C; 10 ms 2 000 A
Tvj = 125 °C; 10 ms 1 750 A
i
2
t Tvj = 25 °C; 8,3 ... 10 ms 20 000 A2
s
Tvj = 125 °C; 8,3 ... 10 ms 15 000 A2
s
tgd Tvj = 25 °C; IG = 1 A; diG/dt = 1 A/µs 1 µs
tgr VD = 0,67 . VDRM 2 µs
(di/dt)cr Tvj = 125 °C 150 A/µs
tq Tvj = 125 °C typ. 100 µs
IH Tvj = 25 °C; max. 250 mA
IL Tvj = 25 °C; RG = 33 ? max. 600 mA
VT Tvj = 25 °C; IT = 300 A max. 1,65 V
VT(TO) Tvj = 125 °C 0,9 V
rT Tvj = 125 °C 2 m?
IDD; IRD Tvj = 125 °C; VDD = VDRM; VRD = VRRM max. 20 mA
VGT Tvj = 25 °C; d. c. 3 V
IGT Tvj = 25 °C; d. c. 150 mA
VGD Tvj = 125 °C; d. c. 0,25 V
IGD Tvj = 125 °C; d. c. 6 mA
Rthjc cont. 0,28 °C/W / 0,14 °C/W
sin. 180 per thyristor/per module 0,30 °C/W / 0,15 °C/W
rec.120 0,32 °C/W / 0,16 °C/W
Rthch 0,2 °C/W / 0,1 °C/W
Tvj – 40 ... +125 °C
Tstg – 40 ... +125 °C
Visol a. c. 50 Hz; r.m.s.; 1 s/1 min 3600 V~/ 3000 V~
M1 to heatsink SI units/ 5 Nm/44 lb. in. ± 15 %3)
M2 to terminals US units 3 Nm/26 lb.in. ± 15 %
a 5 . 9,81 m/s2
w approx. 120 g
Case ? page B 1 – 93 SKKT 91: A 5 SKKL 92: A 59
SKKH 91: A 6 SKKT 92: A 46
SKMT 91: A 65 SKKH 92: A 47 SKKT 92B: A 48